2SK2485 Specs and Replacement
Type Designator: 2SK2485
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 40 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO3P
- MOSFET ⓘ Cross-Reference Search
2SK2485 datasheet
..1. Size:118K nec
2sk2485.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2485 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 20... See More ⇒
..2. Size:209K inchange semiconductor
2sk2485.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2485 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.1. Size:117K 1
2sk2480.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90... See More ⇒
8.2. Size:115K nec
2sk2484.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2484 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 Low On-Resistance 10.0 RDS(on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ci... See More ⇒
8.3. Size:117K nec
2sk2480.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90... See More ⇒
8.4. Size:66K nec
2sk2482.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2482 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance RDS (on) = 4.0 (VGS = 10 V, ID = 3.0 A) 4 Low Ciss Ciss = 900 pF... See More ⇒
8.5. Size:117K nec
2sk2486.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2486 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 2.0 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 1 830... See More ⇒
8.6. Size:86K nec
2sk2483.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 2.8 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 1 ... See More ⇒
8.7. Size:118K nec
2sk2487.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2487 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 2 100... See More ⇒
8.8. Size:117K nec
2sk2481.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2481 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 10.0 Low On-Resistance RDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Cis... See More ⇒
8.9. Size:118K nec
2sk2488.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2488 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 Low On-Resistance 1.5 RDS (on) = 1.2 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 90... See More ⇒
8.10. Size:405K shindengen
2sk2489.pdf
SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2489 Case STO-220 (Unit mm) ( F10S18VZ ) 180V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION DC/DC converters Power supplies of DC 12-24V input Pr... See More ⇒
Detailed specifications: 2SK2477, 2SK2478, 2SK2479, 2SK2480, 2SK2481, 2SK2482, 2SK2483, 2SK2484, IRFB7545, 2SK2486, 2SK2487, 2SK2488, 2SK2494-01, 2SK2498, 2SK2499, 2SK2510, 2SK2511
Keywords - 2SK2485 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
