All MOSFET. STW70N60DM2 Datasheet

 

STW70N60DM2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW70N60DM2
   Marking Code: 70N60DM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 241 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO247

 STW70N60DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW70N60DM2 Datasheet (PDF)

 ..1. Size:599K  st
stw70n60dm2.pdf

STW70N60DM2
STW70N60DM2

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

 4.1. Size:452K  st
stw70n60dm6-4.pdf

STW70N60DM2
STW70N60DM2

STW70N60DM6-4DatasheetN-channel 600 V, 36 m typ., 62 A, MDmesh DM6 Power MOSFET in a TO2474 packageFeaturesVDS RDS(on) max. IDOrder codeSTW70N60DM6-4 600 V 42 m 62 A Fast-recovery body diode Lower RDS(on) per area vs previous generation432 Low gate charge, input capacitance and resistance1 100% avalanche testedTO247-4 Extremely high dv/dt

 6.1. Size:1022K  st
stw70n60m2.pdf

STW70N60DM2
STW70N60DM2

STW70N60M2N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTW70N60M2 650 V 0.040 68 A Extremely low gate charge321 Excellent output capacitance (Coss) profile 100% avalanche testedTO-247 Zener-protected ApplicationsFigure 1. Internal schematic

 7.1. Size:712K  st
stw70n65m2.pdf

STW70N60DM2
STW70N60DM2

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

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