All MOSFET. STWA20N95DK5 Datasheet

 

STWA20N95DK5 Datasheet and Replacement


   Type Designator: STWA20N95DK5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO247
 

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STWA20N95DK5 Datasheet (PDF)

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STWA20N95DK5

STW20N95DK5, STWA20N95DK5 N-channel 950 V, 0.275 typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order code V R max. I DS DS(on) DSTW20N95DK5 950 V 0.330 18 A STWA20N95DK5 Fast-recovery body diode Best R x area DS(on) Low gate charge, input capacitance and resistance 100% a

 5.1. Size:1087K  st
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STWA20N95DK5

STWA20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFET in TO-247 long leads packageDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max ID PWSTWA20N95K5 950 V 0.330 17.5 A 250 W Worldwide best FOM (figure of merit) Ultra low gate charge3 100% avalanche tested21 Zener-protectedTO-247 long leadsApplications Switchi

Datasheet: STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 , STW75N60M6 , STW8N120K5 , STW9N80K5 , IRFB4227 , STWA40N90K5 , STWA48N60DM2 , STWA48N60M2 , VQ1000J , VQ1000P , IRF830L , IRF840AL , SIHFB20N50K .

History: VQ1000P | HAT1054R

Keywords - STWA20N95DK5 MOSFET datasheet

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