IRFD113 Datasheet and Replacement
Type Designator: IRFD113
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: HVMDIP
IRFD113 substitution
IRFD113 Datasheet (PDF)
irfd113pbf sihfd113.pdf

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd113 sihfd113.pdf

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd110pbf.pdf

PD- 95927IRFD110PbF Lead-Free10/27/04Document Number: 91127 www.vishay.com1IRFD110PbFDocument Number: 91127 www.vishay.com2IRFD110PbFDocument Number: 91127 www.vishay.com3IRFD110PbFDocument Number: 91127 www.vishay.com4IRFD110PbFDocument Number: 91127 www.vishay.com5IRFD110PbFDocument Number: 91127 www.vishay.com6IRFD110PbFPeak Diode Recovery
Datasheet: STWA40N90K5 , STWA48N60DM2 , STWA48N60M2 , VQ1000J , VQ1000P , IRF830L , IRF840AL , SIHFB20N50K , AO3400 , SIHFP450 , SIHFP460 , SIHFP460A , SIHLR120 , SIHLU120 , SI1016X , SI1024X , SI1078X .
Keywords - IRFD113 MOSFET datasheet
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History: QN3107M6N | H2302N



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