SIR638DP Datasheet. Specs and Replacement

Type Designator: SIR638DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 1530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00088 Ohm

Package: SO-8

SIR638DP substitution

- MOSFET ⓘ Cross-Reference Search

 

SIR638DP datasheet

 ..1. Size:405K  vishay
 sir638dp.pdf pdf_icon

SIR638DP

SiR638DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) (MAX.) ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested 0.00088 at VGS = 10 V 100 40 63 nC Qgd / Qgs ratio ... See More ⇒

Detailed specifications: SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP, SIR610DP, SIR624DP, SIR626DP, RU7088R, SIR680DP, SIR688DP, SIR690DP, SIR871DP, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP

Keywords - SIR638DP MOSFET specs

 SIR638DP cross reference

 SIR638DP equivalent finder

 SIR638DP pdf lookup

 SIR638DP substitution

 SIR638DP replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.