SIR638DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR638DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 62.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1530 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00088 Ohm
Package: SO-8
SIR638DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR638DP Datasheet (PDF)
..1. Size:405K vishay
sir638dp.pdf
sir638dp.pdf
SiR638DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.00088 at VGS = 10 V 10040 63 nC Qgd / Qgs ratio
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