All MOSFET. SIR638DP Datasheet

 

SIR638DP Datasheet and Replacement


   Type Designator: SIR638DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 62.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00088 Ohm
   Package: SO-8
 

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SIR638DP Datasheet (PDF)

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SIR638DP

SiR638DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.00088 at VGS = 10 V 10040 63 nC Qgd / Qgs ratio

Datasheet: SIHP120N60E , SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP , SIR610DP , SIR624DP , SIR626DP , MMD60R360PRH , SIR680DP , SIR688DP , SIR690DP , SIR871DP , SIR873DP , SIRA01DP , SIRA10BDP , SIRA12BDP .

History: SWU10N70D | MTY30N50E | KHB019N20P1 | SPP6506S26R | SIF12N65C | IPP180N10N3 | IRFR110

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