All MOSFET. SIR638DP Datasheet

 

SIR638DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR638DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 62.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 136 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00088 Ohm
   Package: SO-8

 SIR638DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR638DP Datasheet (PDF)

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 sir638dp.pdf

SIR638DP SIR638DP

SiR638DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.00088 at VGS = 10 V 10040 63 nC Qgd / Qgs ratio

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