SIR871DP Datasheet. Specs and Replacement

Type Designator: SIR871DP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 910 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SO-8

SIR871DP substitution

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SIR871DP datasheet

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SIR871DP

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SIR871DP

New Product SiR878ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.014 at VGS = 10 V 40 100 % Rg and UIS Tested 0.0148 at VGS = 7.5 V 100 38 13.9 nC Compliant to RoHS Directive 2002/95/EC 0.018 at VGS = 4.5... See More ⇒

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SIR871DP

New Product SiR878DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.014 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested 0.0148 at VGS = 7.5 V 100 38 13.6 nC 100 % UIS Tested 0.019 at VGS = 4.5 V 34 Compliant to RoHS Dire... See More ⇒

 9.3. Size:185K  vishay
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SIR871DP

New Product SiR870DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0060 at VGS = 10 V Material categorization 60 For definitions of compliance please see 0.0064 at VGS = 7.5 V 100 60 26.7 nC www.vishay.com/doc?99912 0.0078 at VGS = 4.5 V 60 APPL... See More ⇒

Detailed specifications: SIR182DP, SIR610DP, SIR624DP, SIR626DP, SIR638DP, SIR680DP, SIR688DP, SIR690DP, 60N06, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP, SIRA26DP

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