SIRA24DP Datasheet and Replacement
Type Designator: SIRA24DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 44.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1015 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: SO-8
- MOSFET Cross-Reference Search
SIRA24DP Datasheet (PDF)
sira24dp.pdf

SiRA24DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS
sira26dp.pdf

SiRA26DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF7342QTR | IRFF9210 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003
Keywords - SIRA24DP MOSFET datasheet
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History: IRF7342QTR | IRFF9210 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003



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