SIRA24DP Datasheet. Specs and Replacement

Type Designator: SIRA24DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 1015 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: SO-8

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SIRA24DP datasheet

 ..1. Size:195K  vishay
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SIRA24DP

SiRA24DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒

 9.1. Size:251K  vishay
 sira26dp.pdf pdf_icon

SIRA24DP

SiRA26DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒

Detailed specifications: SIR690DP, SIR871DP, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, IRF840, SIRA26DP, SIRA32DP, SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP

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