All MOSFET. SIRA24DP Datasheet

 

SIRA24DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIRA24DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 44.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.5 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1015 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: SO-8

 SIRA24DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIRA24DP Datasheet (PDF)

 ..1. Size:195K  vishay
 sira24dp.pdf

SIRA24DP SIRA24DP

SiRA24DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS

 9.1. Size:251K  vishay
 sira26dp.pdf

SIRA24DP SIRA24DP

SiRA26DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MIC94052YC6TR | HCT7000M | LSB65R099GT | CMUDM7004 | 2SK549 | LSD60R170GF | FQD3N60CTM-WS

 

 
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