All MOSFET. SIRA60DP Datasheet

 

SIRA60DP Datasheet and Replacement


   Type Designator: SIRA60DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 2320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00094 Ohm
   Package: SO-8
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SIRA60DP Datasheet (PDF)

 ..1. Size:407K  vishay
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SIRA60DP

SiRA60DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 100 % Rg and UIS tested0.00094 at VGS = 10 V 10030 38 nC Material categorization:0.00135 at VGS = 4.5 V 100for definitions of compliance please seewww.vishay.com/doc?99912PowerPAK SO-8

 9.1. Size:324K  vishay
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SIRA60DP

SiRA66DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0023 at VGS = 10 V Material categorization:5030 19.2 nCFor definitions of compliance please see0.0031 at VGS = 4.5 V 50www.vishay.com/doc?99912APPLICATIONSPowerPAK SO-8

 9.2. Size:189K  vishay
sira64dp.pdf pdf_icon

SIRA60DP

SiRA64DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Optimized Qg, Qgd, and Qgd/Qgs ratio D 6reduces switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance 1please see www.vishay.com/doc?999122 S3 S4 S1APP

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History: NTMFS4851NT1G | HLML6401 | SFF40N30N | IPN60R1K5CE | STB9NK60Z-1 | TPCP8006 | AP85T03GH-HF

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