SIUD402ED Datasheet. Specs and Replacement

Type Designator: SIUD402ED

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 7.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: POWERPAK-0806

SIUD402ED substitution

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SIUD402ED datasheet

 ..1. Size:217K  vishay
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SIUD402ED

SiUD402ED www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK 0806 Single TrenchFET power MOSFET D Ultra small 0.8 mm x 0.6 mm outline 3 Ultra thin 0.4 mm max. height 100 % Rg tested Typical ESD protection 2000 V (HBM) Material categorization for definitions of compliance 1 G please see www.vishay.com/doc?99912 2 1 1 S AP... See More ⇒

 8.1. Size:204K  vishay
siud403ed.pdf pdf_icon

SIUD402ED

SiUD403ED www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK 0806 Single D TrenchFET Gen III p-channel power MOSFET 3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) -1.5 V rated RDS(ON) 1 100% Rg tested G 2 1 1 Material categorization for definitions of complianc... See More ⇒

 9.1. Size:217K  vishay
siud412ed.pdf pdf_icon

SIUD402ED

SiUD412ED www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PowerPAK 0806 Single D TrenchFET power MOSFET 3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) 1.2 V rated RDS(on) 1 100 % Rg tested G 2 1 1 Material categorization for definitions of compliance S Top View Bot... See More ⇒

Detailed specifications: SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN, SISS27DN, SISS98DN, IRFP250N, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT, SIZ346DT, SIZ988DT, SIZF914DT, SQ1421EDH

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