All MOSFET. SIUD403ED Datasheet

 

SIUD403ED Datasheet and Replacement


   Type Designator: SIUD403ED
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 8.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: POWERPAK-0806
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SIUD403ED Datasheet (PDF)

 ..1. Size:204K  vishay
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SIUD403ED

SiUD403EDwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET Gen III p-channel power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) -1.5 V rated RDS(ON)1 100% Rg testedG211 Material categorization: for definitions of complianc

 8.1. Size:217K  vishay
 siud402ed.pdf pdf_icon

SIUD403ED

SiUD402EDwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 Single TrenchFET power MOSFETD Ultra small 0.8 mm x 0.6 mm outline3 Ultra thin 0.4 mm max. height 100 % Rg tested Typical ESD protection 2000 V (HBM) Material categorization: for definitions of compliance1G please see www.vishay.com/doc?99912211SAP

 9.1. Size:217K  vishay
 siud412ed.pdf pdf_icon

SIUD403ED

SiUD412EDwww.vishay.comVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) 1.2 V rated RDS(on)1 100 % Rg testedG211 Material categorization: for definitions of complianceSTop View Bot

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History: IRFH5007 | BUZ84 | IRLR024 | AON6794 | APT30M30LLLG | CED05N8 | BL10N70-A

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