SQ1421EDH Datasheet and Replacement
Type Designator: SQ1421EDH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: SOT-363 SC-70-6
SQ1421EDH substitution
SQ1421EDH Datasheet (PDF)
sq1421edh.pdf

SQ1421EDHwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) MOSFETFEATURESSOT-363 TrenchFET power MOSFETSC-70 Single (6 leads) AEC-Q101 qualifiedS4 100 % Rg and UIS testedD5D Typical ESD protection: 800 V6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G2D1(1, 2, 5, 6) D
sq1421eeh.pdf

SQ1421EEHwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.290 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.395 AEC-Q101 QualifieddID (A) - 1.6 100 % Rg and UIS TestedConfiguration Single Typical
sq1420eeh.pdf

SQ1420EEHwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.140 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.200 100 % Rg TestedID (A) 1.6 Typical ESD Protection: 800 VConfiguration
Datasheet: SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT , 2N7000 , SQ1440EH , SQ1912EH , SQ1922EEH , SQ2319ADS , SQ2361AEES , SQ3418AEEV , SQ3419AEEV , SQ3425EV .
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