SQ3461EV Datasheet. Specs and Replacement
Type Designator: SQ3461EV
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSOP-6
SQ3461EV substitution
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SQ3461EV datasheet
sq3461ev.pdf
SQ3461EV www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -12 AEC-Q101 qualified c RDS(on) ( ) at VGS = -4.5 V 0.025 100 % Rg and UIS tested RDS(on) ( ) at VGS = -2.5 V 0.032 Compliant to RoHS Directive 2002/95/EC RDS(on) ( ) at VGS = -1.8 V 0.043 ID (A) -8 Material cate... See More ⇒
sq3469ev.pdf
SQ3469EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 20 Definition RDS(on) ( ) at VGS = - 10 V 0.036 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.064 AEC-Q101 Qualifiedc ID (A) - 8 100 % Rg and UIS Tested Configuration Single Compliant... See More ⇒
sq3460ev.pdf
SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 4.5 V 0.030 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.034 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 1.8 V 0.038 100 % Rg and UIS Tested ID (A) 8 Co... See More ⇒
Detailed specifications: SQ1922EEH, SQ2319ADS, SQ2361AEES, SQ3418AEEV, SQ3419AEEV, SQ3425EV, SQ3426AEEV, SQ3427AEEV, 12N60, SQ3585EV, SQ3987EV, SQ3989EV, SQ4005EY, SQ4940AEY, SQ7414CENW, SQA401EJ, SQD40081EL
Keywords - SQ3461EV MOSFET specs
SQ3461EV cross reference
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