SQJ464EP Datasheet. Specs and Replacement

Type Designator: SQJ464EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SO-8

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SQJ464EP datasheet

 ..1. Size:180K  vishay
sqj464ep.pdf pdf_icon

SQJ464EP

SQJ464EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.017 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.020 Material categorization ID (A) 24 For definitions of compliance please see Configuration Single www... See More ⇒

 9.1. Size:149K  vishay
sqj461ep.pdf pdf_icon

SQJ464EP

SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition RDS(on) ( ) at VGS = - 10 V 0.016 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.021 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Single Compliant ... See More ⇒

 9.2. Size:149K  vishay
sqj463ep.pdf pdf_icon

SQJ464EP

SQJ463EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.010 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.015 100 % Rg and UIS Tested ID (A) - 30 Compliant to RoHS Directive 2002... See More ⇒

 9.3. Size:182K  vishay
sqj460ep.pdf pdf_icon

SQJ464EP

SQJ460EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0096 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0120 AEC-Q101 Qualifiedd ID (A) 32 100 % Rg and UIS Tested Configuration Single Compliant to R... See More ⇒

Detailed specifications: SQJ414EP, SQJ416EP, SQJ418EP, SQJ420EP, SQJ433EP, SQJ446EP, SQJ454EP, SQJ457EP, IRF520, SQJ474EP, SQJ476EP, SQJ479EP, SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP, SQJ914EP

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