SQJ474EP Datasheet and Replacement
Type Designator: SQJ474EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 397 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO-8
SQJ474EP substitution
SQJ474EP Datasheet (PDF)
sqj474ep.pdf

SQJ474EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.030 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.035 Material categorization:ID (A) 26for definitions of compliance please seeConfiguration Single www.
sqj476ep.pdf

SQJ476EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.038 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.050 Material categorization:ID (A) 23for definitions of compliance please seeConfiguration Singlewww
sqj479ep.pdf

SQJ479EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -80 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.033RDS(on) () at VGS = -4.5 V 0.044 100 % Rg and UIS testedID (A) -32 Material categorization:Configuration Singlefor definitions of compliance please see
Datasheet: SQJ416EP , SQJ418EP , SQJ420EP , SQJ433EP , SQJ446EP , SQJ454EP , SQJ457EP , SQJ464EP , IRFB31N20D , SQJ476EP , SQJ479EP , SQJ570EP , SQJ860EP , SQJ868EP , SQJ912BEP , SQJ914EP , SQJ946EP .
History: NTD4815NH-1G | 5N65KG-TF1-T | HAT2280R | AFP8931 | 7N80G-TQ2-R | SFF60P05Z | VP2450N3
Keywords - SQJ474EP MOSFET datasheet
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History: NTD4815NH-1G | 5N65KG-TF1-T | HAT2280R | AFP8931 | 7N80G-TQ2-R | SFF60P05Z | VP2450N3



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