SQJ868EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ868EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 295 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00735 Ohm
Package: SO-8
SQJ868EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ868EP Datasheet (PDF)
sqj868ep.pdf
SQJ868EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see1www.vishay.com/doc?99912S2S3DS41 GTop View Bottom View GPRODUCT SUMMARYVDS (V) 40N-
sqj860ep.pdf
SQJ860EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 40G
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