All MOSFET. SQJA68EP Datasheet

 

SQJA68EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJA68EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.7 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: SO-8

 SQJA68EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJA68EP Datasheet (PDF)

 ..1. Size:254K  vishay
 sqja68ep.pdf

SQJA68EP SQJA68EP

SQJA68EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1S www.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 100RD

 9.1. Size:278K  vishay
 sqja60ep.pdf

SQJA68EP SQJA68EP

SQJA60EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 60RDS

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