All MOSFET. SQJA88EP Datasheet

 

SQJA88EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJA88EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 48 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 30 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 21 nC
   Rise Time (tr): 4 nS
   Drain-Source Capacitance (Cd): 850 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: SO-8

 SQJA88EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJA88EP Datasheet (PDF)

 ..1. Size:205K  vishay
 sqja88ep.pdf

SQJA88EP SQJA88EP

SQJA88EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see 1S www.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 40 GR

 9.1. Size:184K  vishay
 sqja82ep.pdf

SQJA88EP SQJA88EP

SQJA82EPwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 80GRD

 9.2. Size:268K  vishay
 sqja86ep.pdf

SQJA88EP SQJA88EP

SQJA86EPwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1S www.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 80RD

 9.3. Size:227K  vishay
 sqja84ep.pdf

SQJA88EP SQJA88EP

SQJA84EPwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 80RDS

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