10N60G-TA3-T PDF and Equivalents Search

 

10N60G-TA3-T PDF Specs and Replacement


   Type Designator: 10N60G-TA3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220
 

 10N60G-TA3-T substitution

   - MOSFET ⓘ Cross-Reference Search

 

10N60G-TA3-T PDF Specs

 ..1. Size:425K  utc
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf pdf_icon

10N60G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin... See More ⇒

 6.1. Size:425K  utc
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf pdf_icon

10N60G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin... See More ⇒

 8.1. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdf pdf_icon

10N60G-TA3-T

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒

 8.2. Size:122K  chenmko
t10n60gp.pdf pdf_icon

10N60G-TA3-T

CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( ) ... See More ⇒

Detailed specifications: SUD08P06-155L-GE3 , SUD80460E , SUM70060E , SUP10250E , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , IRFB4115 , 10N60L-TF3-T , 10N60G-TF3-T , 10N60L-TF1-T , 10N60G-TF1-T , 10N60L-TF2-T , 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T .

Keywords - 10N60G-TA3-T MOSFET specs

 10N60G-TA3-T cross reference
 10N60G-TA3-T equivalent finder
 10N60G-TA3-T pdf lookup
 10N60G-TA3-T substitution
 10N60G-TA3-T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


10N60G-TA3-T  10N60G-TA3-T  10N60G-TA3-T 

social 

LIST

Last Update

MOSFET: AP50N04Q | AP50N04K | AP50N04GD

 

 

 
Back to Top

 

Popular searches

a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320 | d669a transistor | 2sc1419

 


 
.