10N60G-TA3-T PDF Specs and Replacement
Type Designator: 10N60G-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220
10N60G-TA3-T substitution
10N60G-TA3-T PDF Specs
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin... See More ⇒
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin... See More ⇒
mdf10n60gth mdp10n60gth.pdf
MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒
t10n60gp.pdf
CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( ) ... See More ⇒
Detailed specifications: SUD08P06-155L-GE3 , SUD80460E , SUM70060E , SUP10250E , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , IRFB4115 , 10N60L-TF3-T , 10N60G-TF3-T , 10N60L-TF1-T , 10N60G-TF1-T , 10N60L-TF2-T , 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T .
Keywords - 10N60G-TA3-T MOSFET specs
10N60G-TA3-T cross reference
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10N60G-TA3-T substitution
10N60G-TA3-T replacement
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