All MOSFET. 10N60G-TQ2-R Datasheet

 

10N60G-TQ2-R Datasheet and Replacement


   Type Designator: 10N60G-TQ2-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-263
 

 10N60G-TQ2-R substitution

   - MOSFET ⓘ Cross-Reference Search

 

10N60G-TQ2-R Datasheet (PDF)

 ..1. Size:425K  utc
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf pdf_icon

10N60G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 6.1. Size:425K  utc
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf pdf_icon

10N60G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 8.1. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdf pdf_icon

10N60G-TQ2-R

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl

 8.2. Size:122K  chenmko
t10n60gp.pdf pdf_icon

10N60G-TQ2-R

CHENMKO ENTERPRISE CO.,LTDT10N60GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=10A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=2MHz (Min.) .413 10.5( ).108( )

Datasheet: 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T , 10N60L-T2Q-T , 10N60G-T2Q-T , 10N60L-TQ2-T , 10N60G-TQ2-T , 10N60L-TQ2-R , AON7410 , 10N65KL-TA3-T , 10N65KG-TA3-T , 10N65KL-TF1-T , 10N65KG-TF1-T , 10N65KL-TF2-T , 10N65KG-TF2-T , 10N65KL-TF3-T , 10N65KG-TF3-T .

History: SVF10N60F

Keywords - 10N60G-TQ2-R MOSFET datasheet

 10N60G-TQ2-R cross reference
 10N60G-TQ2-R equivalent finder
 10N60G-TQ2-R lookup
 10N60G-TQ2-R substitution
 10N60G-TQ2-R replacement

 

 
Back to Top

 


 
.