11NM70L-T2Q-T Datasheet and Replacement
Type Designator: 11NM70L-T2Q-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-262
11NM70L-T2Q-T Datasheet (PDF)
11nm70l-tms2-t 11nm70g-tms2-t 11nm70l-tn3-r 11nm70g-tn3-r 11nm70l-t2q-t 11nm70g-t2q-t 11nm70l-t2s-t 11nm70g-t2s-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver
11nm70l-ta3-t 11nm70g-ta3-t 11nm70l-tf3-t 11nm70g-tf3-t 11nm70l-tf1-t 11nm70g-tf1-t 11nm70l-tm3-t 11nm70g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver
Datasheet: 11NM70L-TF1-T , 11NM70G-TF1-T , 11NM70L-TM3-T , 11NM70G-TM3-T , 11NM70L-TMS2-T , 11NM70G-TMS2-T , 11NM70L-TN3-R , 11NM70G-TN3-R , AO3401 , 11NM70G-T2Q-T , 11NM70L-T2S-T , 11NM70G-T2S-T , 12N10L-TA3-T , 12N10G-TA3-T , 12N10L-TM3-T , 12N10G-TM3-T , 12N10L-TN3-R .
Keywords - 11NM70L-T2Q-T MOSFET datasheet
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History: IRFS9631 | CS3R50A3



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