All MOSFET. 11NM70G-T2S-T Datasheet

 

11NM70G-T2S-T Datasheet and Replacement


   Type Designator: 11NM70G-T2S-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-262S
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11NM70G-T2S-T Datasheet (PDF)

 ..1. Size:240K  utc
 11nm70l-tms2-t 11nm70g-tms2-t 11nm70l-tn3-r 11nm70g-tn3-r 11nm70l-t2q-t 11nm70g-t2q-t 11nm70l-t2s-t 11nm70g-t2s-t.pdf pdf_icon

11NM70G-T2S-T

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver

 5.1. Size:240K  utc
 11nm70l-ta3-t 11nm70g-ta3-t 11nm70l-tf3-t 11nm70g-tf3-t 11nm70l-tf1-t 11nm70g-tf1-t 11nm70l-tm3-t 11nm70g-tm3-t.pdf pdf_icon

11NM70G-T2S-T

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

Keywords - 11NM70G-T2S-T MOSFET datasheet

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