12N10L-TA3-T Datasheet and Replacement
Type Designator: 12N10L-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.5 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
12N10L-TA3-T Datasheet (PDF)
12n10l-ta3-t 12n10g-ta3-t 12n10l-tm3-t 12n10g-tm3-t 12n10l-tn3-r 12n10g-tn3-r 12n10g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on)
rfp12n10l.pdf

RFP12N10LData Sheet April 200512A, 100V, 0.200 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 12A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.200power field effect transistors specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, automotiv
Datasheet: 11NM70L-TMS2-T , 11NM70G-TMS2-T , 11NM70L-TN3-R , 11NM70G-TN3-R , 11NM70L-T2Q-T , 11NM70G-T2Q-T , 11NM70L-T2S-T , 11NM70G-T2S-T , IRFZ48N , 12N10G-TA3-T , 12N10L-TM3-T , 12N10G-TM3-T , 12N10L-TN3-R , 12N10G-TN3-R , 12N10G-S08-R , 12N60L-TA3-T , 12N60G-TA3-T .
History: RJK0346DPA | P0604BD | AM50N06-15D | HPD160N06STA
Keywords - 12N10L-TA3-T MOSFET datasheet
12N10L-TA3-T cross reference
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12N10L-TA3-T replacement
History: RJK0346DPA | P0604BD | AM50N06-15D | HPD160N06STA



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