12N10G-TN3-R Specs and Replacement

Type Designator: 12N10G-TN3-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

12N10G-TN3-R substitution

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12N10G-TN3-R datasheet

 ..1. Size:234K  utc
 12n10l-ta3-t 12n10g-ta3-t 12n10l-tm3-t 12n10g-tm3-t 12n10l-tn3-r 12n10g-tn3-r 12n10g-s08-r.pdf pdf_icon

12N10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on) ... See More ⇒

 7.1. Size:953K  belling
 blp12n10g-e.pdf pdf_icon

12N10G-TN3-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D ... See More ⇒

 7.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

12N10G-TN3-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D ... See More ⇒

 7.3. Size:984K  belling
 blp12n10g-q.pdf pdf_icon

12N10G-TN3-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D ... See More ⇒

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Detailed specifications: 11NM70G-T2Q-T, 11NM70L-T2S-T, 11NM70G-T2S-T, 12N10L-TA3-T, 12N10G-TA3-T, 12N10L-TM3-T, 12N10G-TM3-T, 12N10L-TN3-R, IRF830, 12N10G-S08-R, 12N60L-TA3-T, 12N60G-TA3-T, 12N60L-TF1-T, 12N60G-TF1-T, 12N60L-TF2-T, 12N60G-TF2-T, 12N60L-TF3-T

Keywords - 12N10G-TN3-R MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs