12N65KG-TF2-T Datasheet and Replacement
Type Designator: 12N65KG-TF2-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220F
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12N65KG-TF2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
svf12n65f svf12n65k svf12n65s svf12n65str.pdf
SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-TFEATURESStatic Drain-Source On-Resistance: R
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PV628DA | PV537BA | AP3P7R0EMT | 12N80L-TF3-T | GSM3452 | IXTX120P20T | 2SK1496-Z
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History: PV628DA | PV537BA | AP3P7R0EMT | 12N80L-TF3-T | GSM3452 | IXTX120P20T | 2SK1496-Z
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