12N65KG-TQ2-R Specs and Replacement
Type Designator: 12N65KG-TQ2-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-263
12N65KG-TQ2-R substitution
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12N65KG-TQ2-R datasheet
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-T FEATURES Static Drain-Source On-Resistance R ... See More ⇒
Detailed specifications: 12N65KG-TF1-T, 12N65KL-TF2-T, 12N65KG-TF2-T, 12N65KL-TF3-T, 12N65KG-TF3-T, 12N65KL-TQ2-T, 12N65KG-TQ2-T, 12N65KL-TQ2-R, IRF640, 12N70KL-TA3-T, 12N70KG-TA3-T, 12N70KL-TF1-T, 12N70KG-TF1-T, 12N70KL-TF2-T, 12N70KG-TF2-T, 12N70KL-TF3T-T, 12N70KG-TF3T-T
Keywords - 12N65KG-TQ2-R MOSFET specs
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12N65KG-TQ2-R replacement
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