12N80G-T3P-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N80G-T3P-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 198 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-3P
12N80G-T3P-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N80G-T3P-T Datasheet (PDF)
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IXFM42N20
History: IXFM42N20
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