12P10L-TA3-T PDF and Equivalents Search

 ..1. Size:300K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10l-tms4-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte... See More ⇒

 ..2. Size:329K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver... See More ⇒

 6.1. Size:300K  utc
 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t 12p10g-s08-r 12p10g-tms4-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte... See More ⇒

 6.2. Size:329K  utc
 12p10l-tms4-t 12p10g-tms4-t 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver... See More ⇒

 9.1. Size:680K  general electric
 rfm12p08 rfm12p10.pdf

RFM12P08 ... See More ⇒

 9.2. Size:164K  motorola
 mtp12p10.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S... See More ⇒

 9.3. Size:190K  motorola
 mtp12p10rev1a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's Data Sheet MTP12P10 Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS S... See More ⇒

 9.4. Size:457K  st
 strh12p10.pdf

STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS(on) Qg 100V 12 A 265 m 40 nC Fast switching 100% avalanche tested Hermetic package 3 2 1 100 krad TID TO-257AA SEE radiation hardened Applications Satellite Figure 1. Internal schematic diagram High reliability D (1) Description This P-channel ... See More ⇒

 9.5. Size:877K  fairchild semi
 fqd12p10tm f085.pdf

February 2010 tm FQD12P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially t... See More ⇒

 9.6. Size:634K  fairchild semi
 fqb12p10tm.pdf

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailo... See More ⇒

 9.7. Size:666K  fairchild semi
 fqd12p10tf fqd12p10tm.pdf

January 2009 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been espec... See More ⇒

 9.8. Size:629K  fairchild semi
 fqpf12p10.pdf

TM QFET FQPF12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.9. Size:359K  fairchild semi
 rfp12p08 rfp12p10.pdf

RFP12P08, RFP12P10 Data Sheet January 2002 12A, 80V and 100V, 0.300 Ohm, P-Channel Features Power MOSFETs 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel rDS(ON) = 0.300 enhancement mode silicon gate power field effect transistors SOA is Power Dissipation Limited designed for applications such as switching regulators, switching convertors, motor drivers, r... See More ⇒

 9.10. Size:1058K  fairchild semi
 fqp12p10.pdf

November 2013 FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 m Description Features These P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC) technology has been especial... See More ⇒

 9.11. Size:90K  njs
 mtm12p05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10.pdf

... See More ⇒

 9.12. Size:894K  mcc
 mcu12p10.pdf

MCU12P10 Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering In... See More ⇒

 9.13. Size:72K  onsemi
 mtp12p10-d mtp12p10g.pdf

MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed http //onsemi.com power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features RDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times Specified P-Channel a... See More ⇒

 9.14. Size:259K  utc
 12p10.pdf

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte... See More ⇒

 9.15. Size:280K  utc
 utt12p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)... See More ⇒

 9.16. Size:401K  secos
 ssd12p10.pdf

SSD12P10 2A , 650V , RDS(ON) 8 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred f... See More ⇒

 9.17. Size:252K  cet
 ced12p10 ceu12p10.pdf

CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

 9.18. Size:126K  cet
 cep12p10 ceb12p10.pdf

CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

 9.19. Size:1653K  goford
 12p10.pdf

GOFORD 12P10 Description The OGFD12P10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V -100V 170m - 12A Super high dense cell design Advanced trench process technology Reliable... See More ⇒

 9.20. Size:834K  goford
 g12p10k.pdf

GOFORD G12P10K P-Channel Trench MOSFET Description The G12P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS -100V Schematic diagram - ID (at VGS = 10V) -12A - RDS(ON) (at VGS = 10V) ... See More ⇒

 9.21. Size:2919K  kexin
 fqd12p10.pdf

SMD Type MOSFET P-Channel MOSFET FQD12P10 (KQD12P10) TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V) D RDS(ON) 290m (VGS =-10V) 0.127 +0.1 0.80-0.1 max Low gate charge Low Crss + 0.1 Fast switching 2.3 0.60- 0.1 G +0.15 4 .60 -0.15 S Absolute Maximu... See More ⇒

 9.22. Size:69K  chenmko
 chm12p10ngp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160... See More ⇒

 9.23. Size:607K  way-on
 wmq12p10ts.pdf

WMQ12P10TS 100V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ12P10TS uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -100V, I = -12A DS D R ... See More ⇒

 9.24. Size:1087K  cn vbsemi
 vbzfb12p10.pdf

VBZFB12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES -100 V VDS Halogen-free According to IEC 61249-2-21 m RDS(on),typ VGS=10V 215 Definition TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 234 m 100 % Rg and UIS Tested A ID -9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Converters TO-251 S G D G D S P-Cha... See More ⇒

 9.25. Size:834K  cn vbsemi
 vbze12p10.pdf

VBZE12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.180 at VGS = - 10 V - 7.5 TrenchFET Power MOSFET - 100 11 0.200 at VGS = - 4.5 V - 6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Con... See More ⇒

 9.26. Size:911K  cn vbsemi
 ssd12p10.pdf

SSD12P10 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switch... See More ⇒

 9.27. Size:841K  cn vbsemi
 vbzm12p10.pdf

VBZM12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS -100 V Definition RDS(on) VGS = 10 V 167 m TrenchFET Power MOSFET 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 178 m Compliant to RoHS Directive 2002/95/EC ID -18 A Configuration Single APPLICATIONS Power Switch Load Switch ... See More ⇒

 9.28. Size:777K  cn vbsemi
 fqd12p10.pdf

FQD12P10 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switch... See More ⇒