14N50G-TF3-T MOSFET. Datasheet pdf. Equivalent

UNISONIC TECHNOLOGIES CO., LTD 14N50-TC Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET 1TO-220F DESCRIPTION The UTC 14N50-TC is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state 1TO-220F1resistance and a high rugged avalanche characteristics. This power MOSFET is usually u

UNISONIC TECHNOLOGIES CO., LTD 14N50 Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode cond

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Iso

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW14N50E/DDesigner's Data SheetMTW14N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Iso

Philips Semiconductors Product specification PowerMOS transistors PHW14N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 14 Ag Low thermal resistanceRDS(ON) 0.4 sGENERAL DESCRIPTION PINNING SOT429 (TO247)N

SiHG14N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.4- Low Input Capacitance (Ciss)Qg (Max.) (nC) 58- Reduced Capacitive Switching LossesQgs (nC) 8- High Body Diode RuggednessQgd (nC) 14- Avalanche Energy Rated (UIS)

SiHP14N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.4- Low Input Capacitance (Ciss)Qg max. (nC) 58- Reduced Capacitive Switching LossesQgs (nC) 8- High Body Diode RuggednessQgd (nC) 14- Avalanche Energy Rated (UIS)Co

MTW14N50EPreferred DevicePower MOSFET14 Amps, 500 VoltsNChannel TO247This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltageblocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation14 AMPERESmodes. The new

UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power 1MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and TO-263faster switching speed. It can also withstand high energy pulse under the avalanche and

AOW14N50/AOWF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW14N50 & AOWF14N50 have been fabricated 600V@150using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V)designed to deliver high levels of performance and

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOT14N50FD/AOTF14N50FD500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50FD/AOTF14N50FD have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 14Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT14N50FD/AOTF14N50FD500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50FD/AOTF14N50FD have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 14Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOW14N50/AOWF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW14N50 & AOWF14N50 have been fabricated 600V@150using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V)designed to deliver high levels of performance and

FTP14N50CFTA14N50CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power500V 0.46 14 A LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate ChargeG GGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER PACKAGE BRANDPackagesFTP14N50C TO-220 FTP14N50CNot to Sc

CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

CTM14N50Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This high voltage MOSFET uses an advanced terminationRobust High Voltage Termination. scheme to provide enhanced voltage-blocking capabilityAvalanche Energy Specified.without degrading performance over time. In addition, thisSource-to-Drain Diode Recovery Time Comparableadvanced MOSFET is designed to wit

SW14N50DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 500V High ruggedness Low RDS(ON) (Typ 0.38)@VGS=10VID : 14A Low Gate Charge (Typ 54nC)RDS(ON) : 0.38 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce

isc N-Channel MOSFET Transistor AOB14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOT14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOTF14N50FDFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.47(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

isc N-Channel MOSFET Transistor AOT14N50FDFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.47(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor AOTF14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOW14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp