17P10L-TN3-R MOSFET Datasheet: P-Ch, 100V, 17A. Full specification with pinout and replacement list

17P10L-TN3-R Specs and Replacement

Type Designator: 17P10L-TN3-R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

17P10L-TN3-R substitution

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17P10L-TN3-R datasheet

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17p10l-ta3-t 17p10g-ta3-t 17p10l-tf1-t 17p10g-tf1-t 17p10l-tf2-t 17p10g-tf2-t 17p10l-tf3-t 17p10g-tf3-t 17p10l-tm3-t 17p10g-tm3-t 17p10l-tn3-r 17p10g-tn3-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 17P10 Power MOSFET -17A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC convert... See More ⇒

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TM QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tail... See More ⇒