1N60G-AB3-R MOSFET. Datasheet pdf. Equivalent

   Type Designator: 1N60G-AB3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 17.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: SOT-89

1N60G-AB3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N60G-AB3-R Datasheet (PDF)

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1n60l-aa3-r 1n60g-aa3-r 1n60l-ab3-r 1n60g-ab3-r 1n60l-tm3-t 1n60g-tm3-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k.pdf

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

7.1. Size:361K utc
1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

7.2. Size:453K utc
1n60l-aa3-r 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t 1n60l-tms-t 1n60g-tms-t 1n60g-t92-k.pdf