1N60L-T92-K Datasheet and Replacement
Type Designator: 1N60L-T92-K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 17.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO-92
1N60L-T92-K substitution
1N60L-T92-K Datasheet (PDF)
1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k 1n60l-tms-t 1n60g-tms-t 1n60l-t60-k 1n60g-t60-k.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in
1n60l-aa3-r 1n60g-aa3-r 1n60l-ab3-r 1n60g-ab3-r 1n60l-tm3-t 1n60g-tm3-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in
1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in
Datasheet: 1N60L-AB3-R , 1N60G-AB3-R , 1N60L-TN3-R , 1N60G-TN3-R , 1N60L-T60-K , 1N60G-T60-K , 1N60L-T92-B , 1N60G-T92-B , IRFZ48N , 1N60G-T92-K , 1N60L-TMS-T , 1N60G-TMS-T , 1N60L-TMS2-T , 1N60G-TMS2-T , 1N60L-TMS4-T , 1N60G-TMS4-T , 1N60L-TND-R .
History: AO4418
Keywords - 1N60L-T92-K MOSFET datasheet
1N60L-T92-K cross reference
1N60L-T92-K equivalent finder
1N60L-T92-K lookup
1N60L-T92-K substitution
1N60L-T92-K replacement
History: AO4418
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