All MOSFET. 1N60G-TND-R Datasheet

 

1N60G-TND-R Datasheet and Replacement


   Type Designator: 1N60G-TND-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO252
 

 1N60G-TND-R substitution

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1N60G-TND-R Datasheet (PDF)

 ..1. Size:361K  utc
 1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r.pdf pdf_icon

1N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 ..2. Size:453K  utc
 1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k.pdf pdf_icon

1N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 6.1. Size:479K  utc
 1n60l-aa3-r 1n60g-aa3-r 1n60l-ab3-r 1n60g-ab3-r 1n60l-tm3-t 1n60g-tm3-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k.pdf pdf_icon

1N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 7.1. Size:361K  utc
 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf pdf_icon

1N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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Datasheet: 1N60G-T92-K , 1N60L-TMS-T , 1N60G-TMS-T , 1N60L-TMS2-T , 1N60G-TMS2-T , 1N60L-TMS4-T , 1N60G-TMS4-T , 1N60L-TND-R , EMB04N03H , 1N65L-AA3-R , 1N65G-AA3-R , 1N65L-TA3-T , 1N65G-TA3-T , 1N65L-TF3-T , 1N65G-TF3-T , 1N65L-TM3-T , 1N65G-TM3-T .

History: AP9916GJ | CJPF04N60 | TSJ10N10AT | RJK0453DPB | 2SK2706 | PSMNR70-30YLH | TSM2N60SCW

Keywords - 1N60G-TND-R MOSFET datasheet

 1N60G-TND-R cross reference
 1N60G-TND-R equivalent finder
 1N60G-TND-R lookup
 1N60G-TND-R substitution
 1N60G-TND-R replacement

 

 
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