1N65G-T92-B MOSFET. Datasheet pdf. Equivalent
Type Designator: 1N65G-T92-B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 0.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 12.5 Ohm
Package: TO-92
1N65G-T92-B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
1N65G-T92-B Datasheet (PDF)
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11N65GS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURE 11A,650V,R =0.40@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252(DPAK)Absolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65GSDrain-Source Voltage V 650DSSVGate-Source V
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