24NM60G-TQ2-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 24NM60G-TQ2-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 76 nC
Rise Time (tr): 48.2 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO-263
24NM60G-TQ2-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
24NM60G-TQ2-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo
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UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo
stb24nm60n.pdf
STB24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETDPAKFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STB24NM60N 650 V
stf24nm60n stp24nm60n stw24nm60n.pdf
STF24NM60NSTP24NM60N, STW24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETTO-220FP, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STF24NM60N 650 V
stf24nm60n sti24nm60n stp24nm60n stw24nm60n.pdf
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60NN-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet - production dataTAB Features Order codes VDS @Tjmax RDS(on) max. IDSTF24NM60N3 322 11STI24NM60NI2PAKTO-220FP650 V 0.19 17 ASTP24NM60NTABSTW24NM60N 100% avalanche tested332 L
stl24nm60n.pdf
STL24NM60NN-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HVMDmesh II Power MOSFETPreliminary dataFeaturesVDSS @ RDS(on) Type IDS(3) Bottom viewTJmax maxS(3)S(3)G(1)STL24NM60N 650 V
stfi24nm60n.pdf
STFI24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STFI24NM60N 650 V
stb24nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB24NM60NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
sti24nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STI24NM60NFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
