24NM60L-T3P-T MOSFET. Datasheet pdf. Equivalent

   Type Designator: 24NM60L-T3P-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 48.2 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-3P

24NM60L-T3P-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

24NM60L-T3P-T Datasheet (PDF)

..1. Size:458K utc
24nm60l-tq2-r 24nm60g-tq2-r 24nm60l-t3p-t 24nm60g-t3p-t 24nm60l-t3b-t 24nm60g-t3b-t 24nm60l-t3f-t 24nm60g-t3f-t 24nm60l-t47-t 24nm60g-t47-t 24nm60l-t47s-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

5.1. Size:458K utc
24nm60l-ta3-t 24nm60g-ta3-t 24nm60l-tf1-t 24nm60g-tf1-t 24nm60l-tf2-t 24nm60g-tf2-t 24nm60l-tf3-t 24nm60g-tf3-t 24nm60l-tq2-t 24nm60g-tq2-t 24nm60g-t47s-t.pdf

8.1. Size:878K st
stb24nm60n.pdf

STB24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETDPAKFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STB24NM60N 650 V

8.2. Size:890K st
stf24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60NSTP24NM60N, STW24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETTO-220FP, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STF24NM60N 650 V

8.3. Size:1094K st
stf24nm60n sti24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60NN-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet - production dataTAB Features Order codes VDS @Tjmax RDS(on) max. IDSTF24NM60N3 322 11STI24NM60NI2PAKTO-220FP650 V 0.19 17 ASTP24NM60NTABSTW24NM60N 100% avalanche tested332 L

8.4. Size:627K st
stl24nm60n.pdf

STL24NM60NN-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HVMDmesh II Power MOSFETPreliminary dataFeaturesVDSS @ RDS(on) Type IDS(3) Bottom viewTJmax maxS(3)S(3)G(1)STL24NM60N 650 V

8.5. Size:731K st
stfi24nm60n.pdf

STFI24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STFI24NM60N 650 V

8.6. Size:203K inchange semiconductor
stb24nm60n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB24NM60NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.7. Size:216K inchange semiconductor
sti24nm60n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STI24NM60NFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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24NM60L-T3P-T MOSFET. Datasheet pdf. Equivalent

24NM60L-T3P-T Datasheet (PDF)

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