25N10L-TN3-R Specs and Replacement
Type Designator: 25N10L-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
25N10L-TN3-R substitution
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25N10L-TN3-R datasheet
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor 25N10 FEATURES With TO-252(DPAK) packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
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isc N-Channel MOSFET Transistor STP25N10F7 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.035 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION These devices utilize the 7th generation of design rules of S... See More ⇒
Detailed specifications: 25N10L-TF1-T, 25N10G-TF1-T, 25N10L-TF2-T, 25N10G-TF2-T, 25N10L-TF3-T, 25N10G-TF3-T, 25N10L-TM3-T, 25N10G-TM3-T, K4145, 25N10G-TN3-R, 2N60L-T2Q-T, 2N60G-T2Q-T, 2N60L-T60-K, 2N60G-T60-K, 2N60L-T6C-K, 2N60G-T6C-K, 2N60G-E-K08-5060-R
Keywords - 25N10L-TN3-R MOSFET specs
25N10L-TN3-R cross reference
25N10L-TN3-R equivalent finder
25N10L-TN3-R pdf lookup
25N10L-TN3-R substitution
25N10L-TN3-R replacement
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