All MOSFET. 2N60L-TF3-T Datasheet

 

2N60L-TF3-T Datasheet and Replacement


   Type Designator: 2N60L-TF3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220F
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2N60L-TF3-T Datasheet (PDF)

 ..1. Size:291K  utc
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t.pdf pdf_icon

2N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

 ..2. Size:289K  utc
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60g-k08-5060-r.pdf pdf_icon

2N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 ..3. Size:278K  utc
2n60l-t60-t 2n60g-t60-t 2n60l-aa3-r 2n60g-aa3-r 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf1-t 2n60g-tf1-t.pdf pdf_icon

2N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

 0.1. Size:379K  utc
12n60l-ta3-t 12n60g-ta3-t 12n60l-tf1-t 12n60g-tf1-t 12n60l-tf2-t 12n60g-tf2-t 12n60l-tf3-t 12n60g-tf3-t 12n60l-t2q-t 12n60g-t2q-t 12n60l-t3p-t 12n60g-t3p-t.pdf pdf_icon

2N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced usingUTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PB606BX

Keywords - 2N60L-TF3-T MOSFET datasheet

 2N60L-TF3-T cross reference
 2N60L-TF3-T equivalent finder
 2N60L-TF3-T lookup
 2N60L-TF3-T substitution
 2N60L-TF3-T replacement

 

 
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