All MOSFET. 2N60G-K08-5060-R Datasheet

 

2N60G-K08-5060-R Datasheet and Replacement


   Type Designator: 2N60G-K08-5060-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: DFN5060-8
 

 2N60G-K08-5060-R substitution

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2N60G-K08-5060-R Datasheet (PDF)

 0.1. Size:289K  utc
 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60g-k08-5060-r.pdf pdf_icon

2N60G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 0.2. Size:278K  utc
 2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-k08-5060-r 2n60g-k08-5060-r.pdf pdf_icon

2N60G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

 8.1. Size:289K  utc
 2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf pdf_icon

2N60G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 8.2. Size:291K  utc
 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t.pdf pdf_icon

2N60G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

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Datasheet: 2N60L-TF3-T , 2N60G-TF3-T , 2N60L-TF1-T , 2N60G-TF1-T , 2N60L-TF2-T , 2N60G-TF2-T , 2N60L-TF3T-T , 2N60G-TF3T-T , 7N60 , 2N60L-TM3-T , 2N60L-TMS-T , 2N60G-TMS-T , 2N60L-TMS2-T , 2N60G-TMS2-T , 2N60L-TMA-T , 2N60G-TMA-T , 2N60L-TMS4-T .

History: APT4080BN | 25N10G-TM3-T

Keywords - 2N60G-K08-5060-R MOSFET datasheet

 2N60G-K08-5060-R cross reference
 2N60G-K08-5060-R equivalent finder
 2N60G-K08-5060-R lookup
 2N60G-K08-5060-R substitution
 2N60G-K08-5060-R replacement

 

 
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