2N60G-K08-5060-R Specs and Replacement
Type Designator: 2N60G-K08-5060-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 36 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: DFN5060-8
2N60G-K08-5060-R substitution
- MOSFET ⓘ Cross-Reference Search
2N60G-K08-5060-R datasheet
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application... See More ⇒
2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-k08-5060-r 2n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli... See More ⇒
2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application... See More ⇒
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati... See More ⇒
Detailed specifications: 2N60L-TF3-T, 2N60G-TF3-T, 2N60L-TF1-T, 2N60G-TF1-T, 2N60L-TF2-T, 2N60G-TF2-T, 2N60L-TF3T-T, 2N60G-TF3T-T, AO3407, 2N60L-TM3-T, 2N60L-TMS-T, 2N60G-TMS-T, 2N60L-TMS2-T, 2N60G-TMS2-T, 2N60L-TMA-T, 2N60G-TMA-T, 2N60L-TMS4-T
Keywords - 2N60G-K08-5060-R MOSFET specs
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2N60G-K08-5060-R substitution
2N60G-K08-5060-R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPDD60R050G7 | STU6NF10 | 2N60G-TMS2-T
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