All MOSFET. 2N65G-TF1-T Datasheet

 

2N65G-TF1-T Datasheet and Replacement


   Type Designator: 2N65G-TF1-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220F
 

 2N65G-TF1-T substitution

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2N65G-TF1-T Datasheet (PDF)

 ..1. Size:266K  utc
 2n65l-aa3-r 2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tn3-r 2n65g-tn3-r.pdf pdf_icon

2N65G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli

 ..2. Size:270K  utc
 2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t.pdf pdf_icon

2N65G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s

 ..3. Size:258K  utc
 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65g-t6c-k.pdf pdf_icon

2N65G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 6.1. Size:270K  utc
 2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t.pdf pdf_icon

2N65G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s

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Datasheet: 2N60L-TND-R , 2N60L-K08-5060-R , 2N65G-AA3-R , 2N65L-TA3-T , 2N65G-TA3-T , 2N65L-TF3-T , 2N65G-TF3-T , 2N65L-TF1-T , MMD60R360PRH , 2N65L-TF2-T , 2N65G-TF2-T , 2N65KL-TA3-T , 2N65KG-TA3-T , 2N65KL-TF3-T , 2N65KG-TF3-T , 2N65KL-TF1-T , 2N65KG-TF1-T .

History: IRF610P

Keywords - 2N65G-TF1-T MOSFET datasheet

 2N65G-TF1-T cross reference
 2N65G-TF1-T equivalent finder
 2N65G-TF1-T lookup
 2N65G-TF1-T substitution
 2N65G-TF1-T replacement

 

 
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