2N65G-TND-R MOSFET Datasheet: N-Ch, 650V, 2A. Full specification with pinout and replacement list

2N65G-TND-R Specs and Replacement

Type Designator: 2N65G-TND-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO252

2N65G-TND-R substitution

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2N65G-TND-R datasheet

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