All MOSFET. 2N7002ZDWG-AL6-R Datasheet

 

2N7002ZDWG-AL6-R Datasheet and Replacement


   Type Designator: 2N7002ZDWG-AL6-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-363
 

 2N7002ZDWG-AL6-R substitution

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2N7002ZDWG-AL6-R Datasheet (PDF)

 0.1. Size:172K  utc
 2n7002zdwg-al6-r.pdf pdf_icon

2N7002ZDWG-AL6-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance

 5.1. Size:171K  utc
 2n7002zdw.pdf pdf_icon

2N7002ZDWG-AL6-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CR

 7.1. Size:159K  utc
 2n7002zt.pdf pdf_icon

2N7002ZDWG-AL6-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

 7.2. Size:178K  utc
 2n7002z.pdf pdf_icon

2N7002ZDWG-AL6-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

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Datasheet: 2N65G-T2Q-T , 2N65L-T60-K , 2N65G-T60-K , 2N65L-T6C-K , 2N65G-K08-5060-R , 2N7002G-AE2-R , 2N7002KL-AE2-R , 2N7002KG-AE2-R , IRF9540N , 2N80L-TA3-T , 2N80G-TA3-T , 2N80L-TF1-T , 2N80G-TF1-T , 2N80L-TF2-T , 2N80G-TF2-T , 2N80L-TF3-T , 2N80L-TM3-R .

History: HM16N60F | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | IPC100N04S5L-1R9 | SM140R50CT1TL

Keywords - 2N7002ZDWG-AL6-R MOSFET datasheet

 2N7002ZDWG-AL6-R cross reference
 2N7002ZDWG-AL6-R equivalent finder
 2N7002ZDWG-AL6-R lookup
 2N7002ZDWG-AL6-R substitution
 2N7002ZDWG-AL6-R replacement

 

 
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