2N80G-TND-R MOSFET Datasheet: N-Ch, 800V, 2.4A. Full specification with pinout and replacement list

2N80G-TND-R Specs and Replacement

Type Designator: 2N80G-TND-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm

Package: TO252

2N80G-TND-R substitution

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2N80G-TND-R datasheet

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