2N90G-TM3-T MOSFET Datasheet: N-Ch, 900V, 2.2A. Full specification with pinout and replacement list

2N90G-TM3-T Specs and Replacement

Type Designator: 2N90G-TM3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: TO251

2N90G-TM3-T substitution

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2N90G-TM3-T datasheet

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UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy ... See More ⇒

Detailed specifications: 2N80L-TND-R, 2N80G-TND-R, 2N80G-TF3-T, 2N90L-TA3-T, 2N90G-TA3-T, 2N90L-TF3-T, 2N90G-TF3-T, 2N90L-TM3-T, IRF1407, 2N90L-TN3-R, 2N90G-TN3-R, 2N90L-TND-R, 2N90G-TND-R, 2P50L-AA3-R, 2P50G-AA3-R, 2P50L-TN3-R, 2P50G-TN3-R