2N90L-TND-R PDF and Equivalents Search

 

2N90L-TND-R Specs and Replacement

Type Designator: 2N90L-TND-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: TO252

2N90L-TND-R substitution

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2N90L-TND-R datasheet

 ..1. Size:268K  utc
 2n90l-ta3-t 2n90g-ta3-t 2n90l-tf3-t 2n90g-tf3-t 2n90l-tm3-t 2n90g-tm3-t 2n90l-tn3-r 2n90g-tn3-r 2n90l-tnd-r 2n90g-tnd-r.pdf pdf_icon

2N90L-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy ... See More ⇒

Detailed specifications: 2N90L-TA3-T, 2N90G-TA3-T, 2N90L-TF3-T, 2N90G-TF3-T, 2N90L-TM3-T, 2N90G-TM3-T, 2N90L-TN3-R, 2N90G-TN3-R, 5N60, 2N90G-TND-R, 2P50L-AA3-R, 2P50G-AA3-R, 2P50L-TN3-R, 2P50G-TN3-R, 30N06L-TA3-T, 30N06G-TA3-T, 30N06L-TF1-T

Keywords - 2N90L-TND-R MOSFET specs

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