30N06G-TA3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 30N06G-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
30N06G-TA3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
30N06G-TA3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2TO-220F1characteristics. This power MOSFET is usually used
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NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG
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