FDD8782
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD8782
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 18
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
TO252
DPAK
FDD8782
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD8782
Datasheet (PDF)
..1. Size:418K fairchild semi
fdd8782 fdu8782.pdf 
November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
..2. Size:899K cn vbsemi
fdd8782.pdf
FDD8782www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
8.1. Size:314K fairchild semi
fdd8780 fdu8780.pdf
March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.1. Size:308K fairchild semi
fdd8796 fdu8796.pdf
March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.2. Size:310K fairchild semi
fdd8770 fdu8770.pdf
March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee
9.3. Size:358K fairchild semi
fdd8778 fdu8778.pdf
May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has
9.4. Size:342K fairchild semi
fdd8750.pdf
December 2006FDD8750tmN-Channel PowerTrench MOSFET 25V, 2.7A, 40mFeatures General Description Max rDS(on) = 40m at VGS = 10V, ID = 2.7AThis N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either Max rDS(on) = 60m at VGS = 4.5V, ID = 2.7Asynchronous or conventional switching PWM controllers.It has Low g
Datasheet: FDD86102LZ
, STT01L10
, FDD86250
, FDD86326
, FDD8647L
, FDD8770
, FDD8778
, FDD8780
, P60NF06
, FDD8796
, FDD8870
, STT01L07
, FDD8870F085
, STS8816
, FDD8874
, STS6N20
, FDD8876
.
