3N70G-TN3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N70G-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO252
3N70G-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N70G-TN3-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app
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SSM03N70GP-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM03N70GP-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 4.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 2.5AD Pb-free; RoHS-compliant TO-220The SSM03N70G
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SSM03N70GH/GJN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 600VDRDS(ON) 3.6Repetitive Avalanche Rated ID 3.3AFast Switching Speed GSimple Drive Requirement SDESCRIPTION GDS TO-252(H)The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version
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