All MOSFET. 3N80G-TM3-T Datasheet

 

3N80G-TM3-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3N80G-TM3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO251

 3N80G-TM3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N80G-TM3-T Datasheet (PDF)

 ..1. Size:265K  utc
3n80l-ta3-t 3n80g-ta3-t 3n80l-tf3-t 3n80g-tf3-t 3n80l-tf1-t 3n80g-tf1-t 3n80l-tf2-t 3n80g-tf2-t 3n80l-tm3-t 3n80g-tm3-t 3n80l-tms4-r 3n80g-tms4-r 3n80l-tn3-r 3n80g-tn3-r.pdf

3N80G-TM3-T
3N80G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 9.1. Size:334K  trinnotech
tmd3n80g tmu3n80g.pdf

3N80G-TM3-T
3N80G-TM3-T

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

 9.2. Size:729K  cn sinai power
spd3n80g.pdf

3N80G-TM3-T
3N80G-TM3-T

SPD3N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=3A(Vgs=10V) R max. at 25oC () V =10V 4.8DS(on) GS Ultra Low Gate Charge Q max. (nC) 22 g Improved dv/dt Capability Q (nC) 3 gs 100% Avalanche Tested Q (nC) 6 gd RoHS compliant Configuration single Applic

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History: GP1M003A040XG

 

 
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