3N80G-TMS4-R Datasheet and Replacement. Cross Reference Search

3N80G-TMS4-R Datasheet (PDF)

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3n80l-ta3-t 3n80g-ta3-t 3n80l-tf3-t 3n80g-tf3-t 3n80l-tf1-t 3n80g-tf1-t 3n80l-tf2-t 3n80g-tf2-t 3n80l-tm3-t 3n80g-tm3-t 3n80l-tms4-r 3n80g-tms4-r 3n80l-tn3-r 3n80g-tn3-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

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tmd3n80g tmu3n80g.pdf pdf_icon

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

9.2. Size:729K cn sinai power
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SPD3N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=3A(Vgs=10V) R max. at 25oC () V =10V 4.8DS(on) GS Ultra Low Gate Charge Q max. (nC) 22 g Improved dv/dt Capability Q (nC) 3 gs 100% Avalanche Tested Q (nC) 6 gd RoHS compliant Configuration single Applic

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