40N15G-TA3-T MOSFET. Datasheet pdf. Equivalent

UNISONIC TECHNOLOGIES CO., LTD 40N15 Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 40N15 is a N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. FEATURES * RDS(ON)

N- CHANNEL IGBTSGL40N150DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. at Ic=40A1* High Input Impedance* Built in Fast Recovery Diode :VF=1.7 at IF=10A, trr=170nSCAPPLICATIONSG* Home Appliance - Induction Heater - IH JAR E - Micro Wave OvenABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollect

N- CHANNEL IGBTSGL40N150FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. (at Ic=40A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V1500VGEGate - Emitter Voltage V 25

SQM40N15-38www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 150DefinitionRDS(on) () at VGS = 10 V 0.038 TrenchFET Power MOSFETRDS(on) () at VGS = 6 V 0.040 Package with Low Thermal ResistanceID (A) 40 AEC-Q101 QualifieddConfiguration Single 1

SUM40N15-38Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.038 at VGS = 10 V40150 New Low Thermal Resistance Package0.042 at VGS = 6 V38 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

WMLL040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL040N15HG2 uses Wayon's 2nd generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

P-1HGN240N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching21RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitD

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

isc N-Channel MOSFET Transistor 40N15FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.08(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies,converters,AC and DC motor controlsABSOLUTE